Manipulation of domain structures in LiNbO3 thin films using focused ion beam

In this study, we utilized focused ion beam (FIB) technology to generate domains with a size of approximately 500 nm in LiNbO3 thin films. These films were synthesized using the rf sputtering technique. To investigate these domains, we employed scanning Kelvin probe microscopy (SKPM) and Piezorespon...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2024-03, Vol.677, p.415693, Article 415693
Main Author: Batra, Yogita
Format: Article
Language:English
Subjects:
Domain engineering
Ferroelectric
Focused ion beam
LiNbO3
PFM
SKPM
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Summary:In this study, we utilized focused ion beam (FIB) technology to generate domains with a size of approximately 500 nm in LiNbO3 thin films. These films were synthesized using the rf sputtering technique. To investigate these domains, we employed scanning Kelvin probe microscopy (SKPM) and Piezoresponse force microscopy (PFM) techniques. PFM was specifically employed to examine the polarization characteristics of these domains. Notably, we observed distinct contrast in the phase data of neighboring domains. A phase contrast of 180° indicated that the polarization direction in the two neighboring polarized domains was antiparallel. Within the ferroelectric phase, the SKPM method measured a characteristic potential change of approximately 35 mV across neighboring ferroelectric domains with opposite polarization directions (180°-domains). Moreover, we observed that upon illumination, the average surface potential increased by approximately 80 mV. This increase has been attributed to the light-induced population of surface states.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2024.415693