The effect of Yb content on the dielectric properties of TlIn0,99Yb0,01S2 thin films

• Published in: Physica. B, Condensed matter Condensed matter, 2025-01, Vol.697, p.416673, Article 416673
• Main Authors: Bikirova, Meriem, Yakut, Sahin, Bozoglu, Deniz, Ulutas, Kemal, Ismailova, Pakize, Hacıyeva, Ayten, Hasanov, Anar, Deger, Deniz
• Format: Article
• Language: English
• Subjects: Chalcogenides; Dielectric properties; Free volume; Infrared detectors; Rare earth element yb; Thin films
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2024.416673

This paper investigated the impact of ytterbium content on the dielectric properties of TlInS2 and TlIn(0,99)Yb(0,01)S2 thin films with varying thicknesses. The dielectric properties of the thin films were analyzed using dielectric spectroscopy across a frequency range of 1 Hz to 1 MHz and a temperature range of 213 K–373 K. The XRD analysis was used to obtain the structural information of TlInS2 and TlIn(0,99)Yb(0,01)S2 thin films. A comprehensive dielectric analysis of TlInS2 and TlIn(0,99)Yb(0,01)S2 thin films was presented. Using the Cole-Cole equation, It demonstrated that the thin films are electrically heterogeneous structures displaying a non-Debye behavior depending on temperature. The finding indicates that the free volume increases with increasing thicknesses due to the presence of Yb with a greater atomic radius than TlIn(0,99)Yb(0,01)S2 thin films. This study shows that even a small amount of Yb significantly impacts the dielectric properties of both films with the same thicknesses, thereby expanding its potential technological applications.