Bose–Einstein statistics behaviors of exciton–biexciton photoluminescence decay processes in a GaAs/AlAs type-II superlattice

We have investigated the Bose–Einstein (BE) statistics behavior of the exciton–biexciton (EX–BEX) system during the photoluminescence decay processes at 5 K in a (GaAs) 12/(AlAs) 12 type-II superlattice. Owing to the long lifetime of the type-II exciton, which is of the order of microseconds due to...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.651-655
Main Authors: Nakayama, M, Ichida, H
Format: Article
Language:English
Subjects:
Biexciton
Bose–Einstein statistics
Exciton
GaAs/AlAs type-II superlattice
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Summary:We have investigated the Bose–Einstein (BE) statistics behavior of the exciton–biexciton (EX–BEX) system during the photoluminescence decay processes at 5 K in a (GaAs) 12/(AlAs) 12 type-II superlattice. Owing to the long lifetime of the type-II exciton, which is of the order of microseconds due to the indirect transition nature, we have precisely evaluated the density relation between the EX and BEX from the line-shape analysis of time-resolved photoluminescence spectra. At an EX density around 1×10 10/cm 2, the BEX density suddenly increases with a threshold-like profile. This behavior is quantitatively explained by the framework of BE statistics of the EX–BEX system. It is demonstrated that the threshold-like increase of the BEX density is recurred by the incidence of a second-excitation pulse with a time delay, which leads to the dynamical control of the BE statistics behavior.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2003.11.097