Magnetoconductivity of a spin-polarized two-dimensional electron gas near the (1 1 1) silicon surface

The magnetoresistance of a disordered and highly interacting two-dimensional electron gas (2DEG) in a silicon (1 1 1) MOSFET has been measured in the presence of a magnetic field parallel to the surface of the 2DEG. For high electronic densities, a linear negative magnetoconductance has been observe...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2004-04, Vol.22 (1), p.446-449
Main Authors: Estibals, O, Kvon, Z.D, Gusev, G.M, Arnaud, G, Portal, J.C
Format: Article
Language:English
Subjects:
In plane magnetoresistance
MOSFET
Spin-polarized 2DEG
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Summary:The magnetoresistance of a disordered and highly interacting two-dimensional electron gas (2DEG) in a silicon (1 1 1) MOSFET has been measured in the presence of a magnetic field parallel to the surface of the 2DEG. For high electronic densities, a linear negative magnetoconductance has been observed. The field of complete spin saturation has been found to depend linearly on the density. From this result, we have determined the g ∗m ∗ product, which has been shown to decrease as the density is reduced.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2003.12.042