Two-photon absorption from single InGaN/GaN quantum dots

We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppressio...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.119-122
Main Authors: Jarjour, Anas F., Green, Alex M., Parker, Tim J., Taylor, Robert A., Oliver, Rachel A., Andrew D. Briggs, G., Kappers, Menno J., Humphreys, Colin J., Martin, Robert W., Watson, Ian M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
InGaN
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Photoluminescence
Photoluminescence excitation
Physics
Quantum dot
Quantum dots
Time-resolved
Two-photon absorption
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Summary:We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2005.12.022