The origin of switching noise in GaAs/AlGaAs lateral gated devices

We have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model de...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.553-556
Main Authors: Long, A.R., Pioro-Ladrière, M., Davies, J.H., Sachrajda, A.S., Gaudreau, Louis, Zawadzki, P., Lapointe, J., Gupta, J., Wasilewski, Z., Studenikin, S.A.
Format: Article
Language:English
Subjects:
Bias cooling
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
Quantum devices
Telegraph noise
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Summary:We have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model depends on there being a small tunnel current of electrons from gate to channel and we have detected such a current at the level of 10 - 20 A using a quantum corral fabricated on similar material.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2006.03.118