Anisotropic magnetotransport near the ν = 2 3 quantum Hall state

We report experimental results on an anisotropic magnetotransport of a bilayer electron system at the Landau level filling factor ν = 2 3 under tilted magnetic fields. We find that the magnetoresistance changes when the direction of applied in-plane field B ∥ is changed with respect to the direction...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.152-155
Main Authors: Morino, Masayuki, Iwata, Kazuki, Suzuki, Michiro, Fukuda, Akira, Sawada, Anju, Ezawa, Zyun F., Kumada, Norio, Hirayama, Yoshiro
Format: Article
Language:English
Subjects:
Bilayer systems
Magnetoresistance
Quantum Hall state
Tilted magnetic fields
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Summary:We report experimental results on an anisotropic magnetotransport of a bilayer electron system at the Landau level filling factor ν = 2 3 under tilted magnetic fields. We find that the magnetoresistance changes when the direction of applied in-plane field B ∥ is changed with respect to the direction of the current while keeping the strength of B ∥ fixed. This anisotropy only appears at the ground state where interlayer electron tunneling is permitted. Therefore, this phenomenon indicates that bilayer systems at ν = 2 3 with interlayer tunneling inherently have a dissipation mechanism related to the direction of the in-plane field.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2006.03.123