Weak localisation in bilayer graphene

We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unli...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2008-03, Vol.40 (5), p.1360-1363
Main Authors: Gorbachev, R.V., Tikhonenko, F.V., Mayorov, A.S., Horsell, D.W., Savchenko, A.K.
Format: Article
Language:English
Subjects:
Bilayer systems
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Graphene
Localization effects (anderson or weak localization)
Magnetoconductance
Physics
Surface and interface electron states
Weak localisation
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Summary:We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unlike conventional 2D systems, weak localisation in bilayer graphene is affected by elastic scattering processes such as intervalley scattering. Analysis of the dephasing determined from the magnetoconductivity is complemented by a study of the field- and density-dependent fluctuations of the conductance. Good agreement in the value of the coherence length is found between these two studies.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2007.09.009