Non-adiabatic pumping of single electrons affected by magnetic fields

• Published in: Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2010-02, Vol.42 (4), p.911-914
• Main Authors: Leicht, C., Kaestner, B., Kashcheyevs, V., Mirovsky, P., Weimann, T., Pierz, K., Schumacher, H.W.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Current standard; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Magnetic field; Non-adiabatic pump; Physics; Quantum dots; SET
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2009.11.109

Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted.