The effects of recombination lifetime on efficiency and J–V characteristics of InxGa1−xN/GaN quantum dot intermediate band solar cell

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2010-07, Vol.42 (9), p.2353-2357
Main Authors: Es’haghi Gorji, Nima, Movla, Hossein, Sohrabi, Foozieh, Hosseinpour, Ahmad, Rezaei, Meisam, Babaei, Hassan
Format: Article
Language:English
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ISSN:1386-9477
DOI:10.1016/j.physe.2010.05.014