The comparison of the band alignment of GaInAsN quantum wells on GaAs and InP substrates for (0 0 1) and (1 1 1) orientations

• Published in: Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2011-02, Vol.43 (4), p.919-923
• Main Authors: Köksal, K., Gönül, B.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wells
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2010.11.004

The aim of this paper is to examine the effect of growth orientation and dilute nitride on the band alignment of GaInAs quantum wells on GaAs and InP substrates by means of model solid theory. The study provides a comparison of the band alignment and the strained band gap of the related GaInAsN QWs in (1 1 1) and (0 0 1) orientation. Our calculated results show that although 111-oriented GaInAsN QWs enables to reach the longer wavelengths, the conduction band offset gets shallow than that of the 001-oriented ones. ► In GaInAsN QWs, the effect of growth orientation on the band gap and on the band offset appears when the strain is introduced to the QW system. ► While GaInAsN/GaAs QW has only compressive strain, GaInAsN/InP QW has tensile and compressive strain for different In and N concentrations. ► 111-oriented GaInAsN has better CB offset than that of 001-oriented one only for tensile strain case (grown on InP and In < 0.53 ). ► The selection of the growth orientation does not have a significant contribution to the VB offset of GaInAsN on GaAs and InP.