Electron transfer between weakly coupled concentric quantum rings

• Published in: Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2011-07, Vol.43 (9), p.1669-1676
• Main Authors: Filikhin, I., Matinyan, S., Nimmo, J., Vlahovic, B.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals; Exact sciences and technology; Physics
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2011.05.020

The electronic structure of the semiconductor double concentric quantum nano-ring (DCQR) is studied under the single sub-band effective mass approach. We show that in the weakly coupled DCQR, that has been placed in transverse magnetic field, the electron spatial transition between the rings can occur due to electron level anti-crossing. The anti-crossing of the levels with different radial quantum numbers provides the conditions when the electron tunneling between rings becomes possible. Results of numerical simulation for the electron transition are presented for DCQRs of different geometry. In particular, the system of a QR with a QD located at center of this QR is considered. ► We study the electronic structure of the double concentric quantum ring (DCQR). ► Weakly coupled DCQR has been placed in magnetic field. ► Electron spatial transition between the rings occurs due to energylevel anti-crossing. ► Numerical simulations for the transition are performed for DCQRs of different geometry. ► Electron trapping is possible in complex of QR with QD located at center of this QR.