Nanostructured ZnO thin film for hydrogen peroxide sensing

• Published in: Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2011-08, Vol.43 (10), p.1804-1808
• Main Authors: Sivalingam, Durgajanani, Gopalakrishnan, Jeyaprakash Beri, Krishnan, Uma Maheswari, Madanagurusamy, Sridharan, Rayappan, John Bosco Balaguru
• Format: Article
• Language: English
• Subjects: Chemical synthesis methods; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron and ion emission by liquids and solids; impact phenomena; Exact sciences and technology; Field emission, ionization, evaporation, and desorption; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of nanofabrication; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2011.06.015

A thin film of zinc oxide (ZnO) was deposited over the surface of a glass substrate by spray pyrolysis technique. To obtain ZnO thin film with nano-grains in this process, the substrate temperature was optimized and fixed at 503 K. Zinc acetate dihydrate was used as a precursor at an optimal concentration of 0.05 M. The structural and morphological properties of the film were investigated using X-ray Diffraction (XRD) and Field Emission–Scanning Electron Microscopy (FE–SEM), respectively. The peaks in the XRD pattern, confirmed the polycrystalline nature of the film with hexagonal wurtzite structure. Purity of the film has been confirmed through Energy Dispersive X-ray analysis (EDAX). Further the sensing behavior of the film was studied for various concentrations of hydrogen peroxide (H 2O 2) at optimized operating temperatures of 323 and 373 K. The nanostructured ZnO film exhibited good sensitivity in the range of 500 and rapid response–recovery time of 30–60 s, respectively, towards lower concentrations of H 2O 2. A novel attempt has been made to develop a solid state based H 2O 2 sensor using nanostructured ZnO thin film. An appreciable three order electrical resistance change was observed at 373 K for H 2O 2 level less than 10 ppm with sensitivity greater than 500. Also a rapid response and recovery characteristics of 30–60 s, respectively, were observed. [Display omitted] ► A novel attempt has been made to develop a solid state based H 2O 2 sensor. ► An appreciable three order electrical resistance change was observed at 373 K for H 2O 2 level less than 10 ppm with sensitivity greater than 500. ► Rapid response and recovery characteristics of the proposed nanostructured ZnO based H 2O 2 sensor is found to be very encouraging.