Effect of growth temperature on gallium nitride nanostructures using HVPE technique

• Published in: Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2012-06, Vol.44 (9), p.1885-1888
• Main Authors: Munawar Basha, S., Ryu, S.R., Kang, T.W., Srivastava, O.N., Ramakrishnan, V., Kumar, J.
• Format: Article
• Language: English
• Subjects: Chemical synthesis methods; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of nanofabrication; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Physics; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2012.05.014

The growth of hexagonal wurzite one dimensional (1D) gallium nitride (GaN) nanostructures on sapphire substrates using hydride vapor phase epitaxy (HVPE) process was carried out at two different temperatures (973K and 1023K). The GaN nanoneedles were formed at 973K and hexagonal nanorods get formed at 1023K. The morphologies of these nanostructures were studied using high resolution scanning electron microscope. X-ray diffraction and micro-Raman spectroscopy measurements confirmed that the as grown GaN nanostructures are of hexagonal wurtzite structure without any oxide phase. The emission properties of these nanostructures have been investigated using photoluminescence. ► Growth of GaN nanostructures. ► Effect of temperatures on nanostructure growth. ► Structural and optical properties of growth structures.