Superconductivity of In/Mo narrow wires fabricated using focused Ga-ion beam

By using a focused-ion-beam (FIB) method with Ga ions, we prepared quasi-one-dimensional (q-1D) In/Mo specimens with widths of ≈200nm and ≈500nm from two dimensional (2D) films deposited on a SiO2/Si substrate. We observed the superconducting transition of q-1D In/Mo, whose transition temperature Tc...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2016-01, Vol.75, p.235-240
Main Authors: Makise, K., Matsubara, Y., Tasaki, S., Mitsuishi, K., Shinozaki, B.
Format: Article
Language:English
Subjects:
74.78.-w
74.78.Fk
74.81.-g
FIB
Granular superconductor
Keywords
Nanowire
TAPS
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Summary:By using a focused-ion-beam (FIB) method with Ga ions, we prepared quasi-one-dimensional (q-1D) In/Mo specimens with widths of ≈200nm and ≈500nm from two dimensional (2D) films deposited on a SiO2/Si substrate. We observed the superconducting transition of q-1D In/Mo, whose transition temperature Tc is higher than Tc≈3.6K of a 2D In/Mo specimen on a glass substrate. For specimens fabricated using the FIB method, the element distributions analyzed by energy dispersive x-ray spectroscopy reveal Ga invasion into the q-1D In/Mo region. The gradually changing resistance of q-1D In/Mo at temperatures below Tc can be well explained by the thermal activation phase-slip model with Tc=5.1K and coherence length ξ(0)≈9.5nm. •Qquasi-1D In/Mo specimens on SiO/Si were fabricated by the FIB milling with Ga ions.•The q-1D wire affected by Ga-ion irradiation showed superconductivity with Tc0>5K.•The R–T data good agreement with thermal activation phase-slip model.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2015.09.038