Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures

The influence of strain and barrier/well thickness ratio on recombination processes in multi-quantum well (MQW) Al0.1Ga0.9N/GaN structures was investigated using X-ray diffraction and Raman and photoluminescence spectroscopies. The deformation state of the wells and barriers was determined. In addit...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2016-02, Vol.76, p.140-145
Main Authors: Kladko, V., Kuchuk, A., Naumov, А., Safriuk, N., Kolomys, O., Kryvyi, S., Stanchu, H., Belyaev, A., Strelchuk, V., Yavich, B., Mazur, Yu.I., Ware, M.E., Salamo, G.J.
Format: Article
Language:English
Subjects:
AlGaN/GaN
Deformation state
Multi-quantum well
Photoluminescence
Piezoelectric field
X-ray diffraction
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Summary:The influence of strain and barrier/well thickness ratio on recombination processes in multi-quantum well (MQW) Al0.1Ga0.9N/GaN structures was investigated using X-ray diffraction and Raman and photoluminescence spectroscopies. The deformation state of the wells and barriers was determined. In addition, the value of the polarization fields, the density of polarization charges, and the positions of energy levels for optical transitions within the quantum wells were calculated. It was established that compressive strain in the buffer layer as well as in the layers of the MQWs with respect to the buffer layer lead to the piezoelectric fields having equal sign in the well and the barrier. As a result, the recombination of donor–acceptor pairs dominates over transitions between electron and hole states in the quantum well.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2015.10.022