Intersubband optical absorption in GaAs parabolic quantum well due to scattering by ionized impurity centers, acoustical and optical phonons

The intersubband absorption linewidth dependence on well width in GaAs quantum well is calculated. Three mechanisms of scattering have been discussed there: carriers scattering by optical (LO), acoustic (LA) phonons and ionized impurity centers (ION). The method which used for calculations is simila...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2018-09, Vol.103, p.246-251
Main Authors: Gevorgyan, A.H., Mamikonyan, N.E., Kostanyan, A.A., Kazaryan, E.M.
Format: Article
Language:English
Subjects:
Absorption linewidth
Intersubband transitions
Phonon scattering
Quantum well
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Summary:The intersubband absorption linewidth dependence on well width in GaAs quantum well is calculated. Three mechanisms of scattering have been discussed there: carriers scattering by optical (LO), acoustic (LA) phonons and ionized impurity centers (ION). The method which used for calculations is similar to a well-known method of calculating transport mobility. The estimation for absorption coefficient is proposed, based on two-dimensional dynamical conductivity expression. The LO phonon emission process is activated starting from some quantum well (QW) width so it has its impact on absorption linewidth. •Absorption lineshape broadening 2Γop(E) for intersubband transitions is calculated.•Scattering rates abrupt change for LO phonons with the change of QW width is reveled.•An absorption coefficient estimation for intersubband transitions in QW is proposed.•Absorption coefficient for two temperatures (T=77K and T=300K) and for different values of QW widths is evaluated.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2018.06.004