Electron–interface phonon scattering in quantum wells due to absorbtion and emission of interface phonons

• Published in: Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2020-06, Vol.120, p.114043, Article 114043
• Main Authors: Dan, Ho Kim, Dinh, Le, Trien, Hoang Dinh, Phong, Tran Cong, Hien, Nguyen Dinh
• Format: Article
• Language: English
• Subjects: FWHM; GaAs/AlAs quantum wells; Interface optical phonons
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2020.114043

In this article, using the operator projection technique, we will theoretically study the electron-interface phonon scattering process due to the absorbtion and emission of interface phonons by calculating the expression for the absorption power (AP) in GaAs/AlAs quantum wells (QWs). The full width at half maximum (FWHM) of the magneto-interface phonon resonance peaks was obtained by using the profile method. The FWHM is given as functions of the temperature, well width, and magnetic field presented to compare for both the barrier material AlAs and well material GaAs in the two cases of emission and absorbtion of interface modes. The result clearly demonstrates important roles of the interface optical modes when the well width is small enough. •Electron-interface optical phonon scattering in GaAs/AlAs QWs is investigated.•Blueshift and redshift behaviors of peaks with magnetic field and well width are discussed.•Absorption power and FWHM are affected by well width, and magnetic field.•Interface mode absorption/emission in both the well and barrier materials are compared.