Analog-type resistive switching behavior of Au/HfO2/ZnO memristor fabricated on flexible Mica substrate

Analog-type resistive switching (RS) behavior of Au/HfO2/ZnO thin film deposited on flexible Mica substrate is studied. ZnO thin film is deposited on insulating Mica substrate as bottom electrode and buffer layer by magnetron sputtering. And then HfO2 thin film is fabricated by chemical solution dep...

Full description

Saved in:
Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2020-06, Vol.120, p.114047, Article 114047
Main Authors: Tang, Zhen-Xun, Tang, Wen-Wei, Tang, Xin-Gui, Liu, Qiu-Xiang, Jiang, Yan-Ping, Li, Wen-Hua, Tang, Zhen-Hua, Guo, Xiao-Bin, Tang, Zhen-Fang
Format: Article
Language:English
Subjects:
Analog-type resistive switching
Migration and accumulation
Mobile charges
Schottky barrier height
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Analog-type resistive switching (RS) behavior of Au/HfO2/ZnO thin film deposited on flexible Mica substrate is studied. ZnO thin film is deposited on insulating Mica substrate as bottom electrode and buffer layer by magnetron sputtering. And then HfO2 thin film is fabricated by chemical solution deposition method. The device shows diode-like current-voltage (I-V) characteristic, and its conductivity decreases gradually with consecutive sweeping of applied bias. Such resistive switching behavior is similar to the learning process of biological synapse. A model of mobile charges migration and accumulation at interface is constructed to understand the resistive switching mechanism. It is suggested that the change of Schottky barrier height (SBH) is responsible for resistive switching. This study provides guidance to develop HfO2-based memristor for electronic synapse device, but also provides the theoretical model for understanding the physical mechanism of analog-type resistive switching. Au/HfO2/ZnO memristor is fabricated on flexible Mica substrate. Diode-like current-voltage characteristic is obtained. This memristor shows analog-type resistive switching which is relevant to the change of Schottky barrier height at Au/HfO2 contact. [Display omitted] •Analog-type resistive switching is first reported in Au/HfO2/ZnO memristor.•Interfacial resistive switching is identified as the dominant mechanism of HfO2-based memristor.•A model of charge accumulation at interface is constructed to explain the mechanism of analog-type resistive switching.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2020.114047