An analytical Seebeck coefficient model for disordered organic semiconductors

An analytical Seebeck coefficient model for disordered organic semiconductors based on hopping transport and percolation theory is proposed here. This model demonstrates the relationships between Seebeck coefficient and temperature, carrier concentration as well as disorder degree of materials. As c...

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Bibliographic Details
Published in:Physics letters. A 2017-10, Vol.381 (40), p.3441-3444
Main Authors: Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming
Format: Article
Language:English
Subjects:
Organic semiconductor
Percolation theory
Seebeck coefficient
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Summary:An analytical Seebeck coefficient model for disordered organic semiconductors based on hopping transport and percolation theory is proposed here. This model demonstrates the relationships between Seebeck coefficient and temperature, carrier concentration as well as disorder degree of materials. As compared with experimental data, the simulated results show a convincing coincidence with experimental results. Moreover, the effect from doping is addressed. The calculation results show that the Seebeck coefficient will decrease with increasing doping ratio, after passing a minimum value then a sharp increase of Seebeck coefficient appears. •An analytical Seebeck coefficient model for organic semiconductor based on hopping transport and percolation theory is proposed.•The relationship between Seebeck coefficient and temperature, carrier concentration, and disorder degree has been discussed.•Doping effect on Seebeck coefficient has been addressed.
ISSN:0375-9601
1873-2429
DOI:10.1016/j.physleta.2017.09.006