Spatial structures of islands of electron-hole liquid in semiconductor quantum wells

• Published in: Physics letters. A 2020-03, Vol.384 (8), p.126185, Article 126185
• Main Authors: Chernyuk, A.A., Sugakov, V.I.
• Format: Article
• Language: English
• Subjects: Electron-hole liquid; Nonequilibrium system; Semiconductor heterostructures; Two-dimensional systems
• ISSN: 0375-9601; 1873-2429
• DOI: 10.1016/j.physleta.2019.126185

The formation of the different structures of islands of electron-hole liquid in the quantum well is studied in a statistical model. The interaction between the islands of electron-hole liquid is considered by influencing of neighboring islands through exciton gas around the considered island. Two restricted regions were studied: an infinite strip and a disk. The theory gives the possibility to determine the probability of different states realization and to find the most probable state. The dependence of the radius, mutual positions of the electron-hole liquid islands, the number of the islands in the disk on the pumping, temperature and parameters of the system (the size and the shape) are calculated. •Statistical theory of islands of electron-hole liquid formation in quantum wells.•Interaction between islands is carried out through the diffusion fields of excitons.•Calculation for the parameters, which are typical for Si/Si1−xGex/Si.•The radius and location of islands in the stripped and disk-shaped systems.•Estimation of fluctuation of distances between islands in the strip.