Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide

In this study, a novel polishing approach was proposed, that combined nanodiamond mechanical polishing (MP) with silicon dioxide chemical-mechanical polishing (CMP) to achieve the high-quality and high-efficiency processing of single-crystal silicon carbide (SiC). A compound-polishing experiment was...

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Bibliographic Details
Published in:Precision engineering 2024-03, Vol.86, p.160-169
Main Authors: Ban, Xinxing, Tian, Zhuangzhi, Zhu, Jianhui, Duan, Tianxu, Zheng, Shaodong, Wang, Ningchang, Han, Shaoxing, Qiu, Hui, Li, Zhengxin
Format: Article
Language:English
Subjects:
Compound polishing
Material-removal rate
Processing mechanism
Silicon carbide
Surface roughness
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Summary:In this study, a novel polishing approach was proposed, that combined nanodiamond mechanical polishing (MP) with silicon dioxide chemical-mechanical polishing (CMP) to achieve the high-quality and high-efficiency processing of single-crystal silicon carbide (SiC). A compound-polishing experiment was conducted to evaluate the material-removal rate (MRR) and surface roughness. The results showed that MP had a high MRR and poor surface quality, whereas CMP obtained a better surface quality; however, its MRR was low. Using surface roughness as the research target, the relationship between MP and CMP was then obtained through a combined process optimisation analysis. Consequently, the compound-polishing method was revealed in terms of the material-removal mechanism, with the surface quality being related to the formation rate of the oxidation reaction layer. Finally, the effectiveness of the compound-polishing method was experimentally verified. For the same surface accuracy, the polishing efficiency of this method improved by 30 % compared to that of CMP. The results proved the proposed compound-polishing approach to be beneficial for enhancing the machining accuracy and efficiency of a single-crystal SiC substrate. •A novel polishing approach improves the processing effect of single-crystal silicon carbide.•Experimental results address the matching of machining time on compound-polishing.•The polishing efficiency rises 30 % compared to that of chemical-mechanical polishing.•A 4H–SiC wafer has an ultrasmooth surface and nanoscale roughness after polishing.
ISSN:0141-6359
1873-2372
DOI:10.1016/j.precisioneng.2023.12.002