Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications

This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25°C). Temperature dependent DC and RF characteristics are measured from 25°C to 200°C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the temperat...

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Bibliographic Details
Published in:Procedia engineering 2016, Vol.141, p.103-107
Main Authors: Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
Format: Article
Language:English
Subjects:
InAlN/GaN HEMTs
RF performance
temperature dependent
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Summary:This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25°C). Temperature dependent DC and RF characteristics are measured from 25°C to 200°C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the temperature increases from 25°C to 200°C. For maximum fT, it drops to 87 GHz and 64 GHz at 100°C and 200°C respectively. These results show that although both DC and RF performances decrease with the increase in temperature, the device still exhibits high mm-wave performance at high temperatures. Thus, InAlN/GaN based HEMTs are very promising for high temperature mm-wave applications.
ISSN:1877-7058
1877-7058
DOI:10.1016/j.proeng.2015.09.222