Glucose Sensing by an Enzyme-modified ZnO-based FET

Characteristics of an enzyme-modified field-effect transistor (EnFET) made of a ZnO-based ion-sensitive FET with immobilized glucose oxidase on the gate surface are studied for the application to healthcare chips. The EnFET was found to be able to detect reversibly and repeatedly the β-D glucose in...

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Bibliographic Details
Published in:Procedia engineering 2016, Vol.168, p.84-88
Main Authors: Koike, Kazuto, Mori, Yuina, Sasa, Shigehiko, Hirofuji, Yuichi, Yano, Mitsuaki
Format: Article
Language:English
Subjects:
enzyme-modified FET
glucose sinsing
ion-sensitive FET
ZnO-based FET
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Summary:Characteristics of an enzyme-modified field-effect transistor (EnFET) made of a ZnO-based ion-sensitive FET with immobilized glucose oxidase on the gate surface are studied for the application to healthcare chips. The EnFET was found to be able to detect reversibly and repeatedly the β-D glucose in solution in the range of 0.2-40 mmol/L with an apparent Michaelis constant of 3.3 mmol/L, indicating the suitability for diabetic plasma glucose sensors.
ISSN:1877-7058
1877-7058
DOI:10.1016/j.proeng.2016.11.153