Study on the applications of SiC thin films to MEMS techniques through a fabrication process of cantilevers

• Published in: Progress in solid state chemistry 2005, Vol.33 (2), p.309-315
• Main Authors: Hyun, J.-S., Park, J.-H., Moon, J.-S., Park, J.H., Kim, S.H., Choi, Y.J., Lee, N.-E., Boo, J.-H.
• Format: Article
• Language: English
• ISSN: 0079-6786; 1873-1643
• DOI: 10.1016/j.progsolidstchem.2005.11.030

We have tried to find the most suitable conditions for the deposition process of silicon carbide thin films as a material for MEMS techniques. We have also studied its application to semiconductor processes. To do this, we have tried to fabricate several dimensions of cantilevers with these silicon carbide thin films. High quality silicon carbide thin films are grown by metal-organic chemical vapor deposition (MOCVD). This process employs single molecular precursors such as diethylmethylsilane (DEMS), 1,3-disilabutane (DSB) at a pressure of 1 × 10 −3 Pa and a growth temperature in the range of 700–1000 °C. Two fabrication methods are tested for initial fabrication of cantilevers. First, deposit SiC thin films on Si based atomic force microscopy (AFM) cantilevers. Second, used the lift-off process. To get three-dimensional cantilever-shaped SiC thin films, moreover, we chemically etched silicon substrate with strong alkaline solution such as TMAH at 80 °C. In addition, a high resolution of probe tips on the cantilevers was achieved using electron-beam deposition in a carbon atmosphere.