Formation of color centers at X-ray irradiation of ZnSe single crystals

• Published in: Radiation measurements 2020-02, Vol.131, p.106232, Article 106232
• Main Authors: Degoda, V. Ya, Podust, G.P., Pavlova, N. Yu, Alizadeh, M.
• Format: Article
• Language: English
• Subjects: Broadband semiconductors; Color centers; Monocrystal; Photoluminescence; X-ray luminescence; ZnSe
• ISSN: 1350-4487; 1879-0925
• DOI: 10.1016/j.radmeas.2019.106232

In the present work we study the dose dependences of X-ray luminescence and X-ray conductivity at different temperatures and different angles of incidence of the exciting radiation and the registration of luminescence. Low-energy X-ray quanta (with energies up to 20 keV) do not create new structural defects in ZnSe crystals, but can only recharge existing ones. It was established from the dose dependences of the luminescence intensity of the 630-nm and 970-nm bands that X-rays do not create the color centers in ZnSe crystals, even those that are temperature unstable, which absorb the luminescent radiation. This fact is confirmed by the absence of conduction current change at additional optical intensive irradiation of ZnSe samples by optical quanta with wavelengths that coincide with luminescent quanta. •Dose dependences of X-ray luminescence and X-ray conductivity in ZnSe crystals were studied.•Low-energy X-ray quanta do not create new structural defects in ZnSe but can only recharge existing ones.•X-ray does not create the color centers in ZnSe crystals which absorb the luminescent radiation.•This fact is confirmed by the absence of conduction current change at additional optical intensive irradiation of the samples.