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Optical, electrical and ferromagnetic studies of ZnO:Fe diluted magnetic semiconductor nanoparticles for spintronic applications

In the present investigation, diluted magnetic semiconductor (Zn1−xFexO) nanoparticles with different doping concentrations (x=0, 0.02, 0.04, 0.06, and 0.08) were successfully synthesized by sol-gel auto-combustion method. The crystal structure, morphology, optical, electrical and magnetic propertie...

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Published in:Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy Molecular and biomolecular spectroscopy, 2017-11, Vol.186, p.120-131
Main Authors: Elilarassi, R., Chandrasekaran, G.
Format: Article
Language:English
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Summary:In the present investigation, diluted magnetic semiconductor (Zn1−xFexO) nanoparticles with different doping concentrations (x=0, 0.02, 0.04, 0.06, and 0.08) were successfully synthesized by sol-gel auto-combustion method. The crystal structure, morphology, optical, electrical and magnetic properties of the prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis using x-rays (EDAX), ultraviolet–visible spectrophotometer, fluorescence spectroscope (FS), vibrating sample magnetometer (VSM) and broad band dielectric spectrometer (BDS). XRD results reveal that all the samples possess hexagonal wurtzite crystal structure with good crystalline quality. The absence of impurity phases divulge that Fe ions are well incorporated into the ZnO crystal lattice. The substitutional incorporation of Fe3+ at Zn sites is reflected in optical absorption spectra of the samples. Flouorescence spectra of the samples show a strong near-band edge related UV emission as well as defect related visible emissions. The semiconducting behavior of the samples has been confirmed through electrical conductivity measurements. Magnetic measurements indicated that all the samples possess ferromagnetism at room temperature. [Display omitted] •XRD, FTIR, UV-Visible and Emission studies confirm substitution of Fe in ZnO•Possess ferromagnetic and semiconducting properties•Exhibit UV and defect related emissions•Efficient material for Optoelectronic and Spintronic applications
ISSN:1386-1425
DOI:10.1016/j.saa.2017.05.065