Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion is common, which...

Full description

Saved in:
Bibliographic Details
Published in:Science bulletin (Beijing) 2019-10, Vol.64 (19), p.1436-1455
Main Author: Xia, Guangrui (Maggie)
Format: Article
Language:English
Subjects:
Group IV semiconductors
Interdiffusion
Modelling
SiGe materials and devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion is common, which is generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field.
ISSN:2095-9273
DOI:10.1016/j.scib.2019.07.012