Combinatorial screening of work functions in Ta–C–N/HfO2/Si advanced gate stacks

This paper reports a comprehensive investigation into the effects of the C and N contents and temperature anneals on the electrical characteristics of Ta–C–N/HfO2/Si advanced gate stacks (equivalent oxide thicknesses of ∼1.0–1.6nm) using a combinatorial methodology. The work functions (Φm) of Ta–C–N...

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Bibliographic Details
Published in:Scripta materialia 2013-03, Vol.68 (5), p.333-336
Main Authors: Chang, K.-S., Green, M.L., Levin, I., De Gendt, S.
Format: Article
Language:English
Subjects:
Combinatorial methodology
Electrical properties
Refractory metals
Sputtering
Thin films
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Summary:This paper reports a comprehensive investigation into the effects of the C and N contents and temperature anneals on the electrical characteristics of Ta–C–N/HfO2/Si advanced gate stacks (equivalent oxide thicknesses of ∼1.0–1.6nm) using a combinatorial methodology. The work functions (Φm) of Ta–C–N, with higher C and N, can be tuned up to ∼5.1eV after 900°C anneals, suggesting a promising p-type gate metal for complementary metal–oxide semiconductor applications.
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2012.11.006