Bonding technology based on solid porous Ag for large area chips

A bonding technology is introduced by using surface polished porous Ag in die-attachment structure. Bonding strength did not change much as the chip size varied from 3×3mm2 to 15×15mm2. This confirms that the technology was not influenced by the chip size, and thus can be used in large area bonding....

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Bibliographic Details
Published in:Scripta materialia 2018-03, Vol.146, p.123-127
Main Authors: Chen, Chuantong, Noh, Seungjun, Zhang, Hao, Choe, Chanyang, Jiu, Jinting, Nagao, Shijo, Suganuma, Katsuaki
Format: Article
Language:English
Subjects:
Bonding mechanism
Hillock growth
Large area bonding
Porous Ag structure
Power electronic module
Stress-induced migration
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Summary:A bonding technology is introduced by using surface polished porous Ag in die-attachment structure. Bonding strength did not change much as the chip size varied from 3×3mm2 to 15×15mm2. This confirms that the technology was not influenced by the chip size, and thus can be used in large area bonding. Bonding mechanism based on stress-induced migration was discussed with the three dimensional finite element analyses. Transmission electron microscopy (TEM) observation further confirmed that single crystal hillocks and Ag particles formed at the bonding interface, bridging the interface together. [Display omitted]
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2017.11.035