Observation of dielectric resonance and negative capacitance in 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 textured thin films

• Published in: Scripta materialia 2023-04, Vol.227, p.115272, Article 115272
• Main Authors: Pradhan, Soumen, Thiyagarajan, R., Sadhu, Sai Pavan Prashanth, Ramachandra Rao, M.S.
• Format: Article
• Language: English
• Subjects: Dielectric resonance; Negative capacitance; PMN-PT; Relaxor ferroelectric; SRO
• ISSN: 1359-6462; 1872-8456
• DOI: 10.1016/j.scriptamat.2022.115272

Negative capacitance effect (NCE) in ferroelectric/dielectric thin film heterostructures has received a great deal of interest as it promises to bring down the operational voltage of field-effect transistors below the Boltzmann limit. Here, it has been observed in 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT)/SrRuO3 heterostructures grown on Pt/Ti/SiO2/Si substrate using pulsed laser deposition (PLD) technique. Phase pure PMN-PT thin film with (111) preferred orientation displayed excellent ferroelectric and dielectric properties with PS ∼36.80 μC/cm2, ϵr ∼1900 and tanδ ∼0.06 (at 1 kHz). Interestingly, dielectric resonance was realized around 3 MHz and fitted to Lorentz model. Its temperature variation beyond the ferroelectric phase transition showed clear signature of NCE after resonance frequency. Furthermore, the entire structure exhibited Fano-like resonance. The direct observation of NCE in relaxor ferroelectric, PMN-PT integrated on Si will aid in better understanding of the fundamental aspects of NCE which can trigger another technological revolution in semiconductor industry.