Complementary use of atom probe tomography (APT) and differential hall effect metrology (DHEM) for activation loss in phosphorus-implanted polycrystalline silicon

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Bibliographic Details
Published in:Scripta materialia 2024-03, Vol.241, p.115877, Article 115877
Main Authors: Lin, Kun-Lin, Lee, Fa-Yan, Chen, Yi-Meng, Tseng, Yu-Jen, Yen, Hung-Wei
Format: Article
Language:English
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ISSN:1359-6462
DOI:10.1016/j.scriptamat.2023.115877