Comparison of plasma generation behaviors between a single crystal semiconductor bridge (single-SCB) and a polysilicon semiconductor bridge (poly-SCB)

A single crystal semiconductor bridge (single-SCB) has been fabricated by a micro-electro-mechanical system (MEMS) technique based on anisotropic wet etching, where an air gap replaces the oxide layer (SiO 2) used as a thermal insulating barrier in the conventional polycrystalline semiconductor brid...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2004-09, Vol.115 (1), p.104-108
Main Authors: Park, Myung-Il, Choo, Hyo-Tae, Yoon, Suk-Hwan, Park, Chong-Ook
Format: Article
Language:English
Subjects:
Igniter
Semiconductor bridge
Silicon wet etching
Thermal structure
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Summary:A single crystal semiconductor bridge (single-SCB) has been fabricated by a micro-electro-mechanical system (MEMS) technique based on anisotropic wet etching, where an air gap replaces the oxide layer (SiO 2) used as a thermal insulating barrier in the conventional polycrystalline semiconductor bridge (poly-SCB). Upon flowing current in the single-SCB and the poly-SCB, the single-SCB exhibits a second peak of plasma generation at 500 ns, whereas that of the poly-SCB is founded at 600 ns. The results of an electrical experiment are analyzed through a finite element analysis and a simple discrete-element modeling of the thermal structure. From these investigations, it is clear that more effective heat conduction related to the plasma discharge behaviors is achieved in the single-SCB with a simpler thermal structure.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2004.04.038