A distributed MEMS phase shifter on a low-resistivity silicon substrate

Distributed MEMS phase shifters using CMOS-grade low-resistivity silicon have been successfully developed. Kapton films were utilized as dielectric layers to reduce RF signal attenuation in the lossy silicon substrate. The scattering parameters were evaluated from DC to 26 GHz. The phase shifting re...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2008-05, Vol.144 (1), p.207-212
Main Authors: Wang, Jianqun, Ativanichayaphong, Thermpon, Huang, Wen-Ding, Cai, Ying, Davis, Alan, Chiao, Mu, Chiao, J.-C.
Format: Article
Language:English
Subjects:
Kapton
Loss
MEMS
Phase shifter
Polymer
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Summary:Distributed MEMS phase shifters using CMOS-grade low-resistivity silicon have been successfully developed. Kapton films were utilized as dielectric layers to reduce RF signal attenuation in the lossy silicon substrate. The scattering parameters were evaluated from DC to 26 GHz. The phase shifting reaches 43° and insertion losses are less than 1.4 dB. The manufacturing process is simple and compatible with CMOS and post CMOS processes.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2007.12.027