Lead-free 0.75(Bi0.5Na0.5)TiO3-0.25SrTiO3 (BNT-ST) epitaxial films grown on Si (001) substrates via pulsed laser deposition

•Epitaxial growth of LNO electrode films onto Si (001) substrates.•Epitaxial growth of BNT-ST piezoelectric thin films on epitaxial LNO electrode films.•High crystallinity of the BNT-ST and LNO films onto Si (001) substrates.•No distinct diffusion of constituent elements in the BNT-ST/LNO/CeO2/YSZ s...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2016-06, Vol.243, p.117-122
Main Authors: Yang, Ki-Su, Choi, Min-Ju, Choi, Jin-Suck, Eom, Ji-Ho, Park, Byung-Ju, Lee, Soo-Yeol, Yoon, Soon-Gil
Format: Article
Language:English
Subjects:
CeO2/YSZ buffered Si substrate
Epitaxial relationship
Ferroelectric property
Lead-free BNT-ST films
Pulsed laser deposition
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Summary:•Epitaxial growth of LNO electrode films onto Si (001) substrates.•Epitaxial growth of BNT-ST piezoelectric thin films on epitaxial LNO electrode films.•High crystallinity of the BNT-ST and LNO films onto Si (001) substrates.•No distinct diffusion of constituent elements in the BNT-ST/LNO/CeO2/YSZ structure. Lead-free BNT-ST and La0.5Ni0.5O3 (LNO) bottom electrode films were epitaxially grown onto CeO2/YSZ (yttria stabilized zirconia) buffered Si (001) substrates via pulsed laser deposition. The lattice alignment of CeO2/YSZ and BNT-ST/LNO showed 45° twisted cube-on-cube epitaxial relationship, indicating high crystallinity for the BNT-ST and LNO films. The constituent elements in the BNT-ST/LNO/CeO2/YSZ structure showed no distinct diffusion between the layers. The BNT-ST epitaxial films demonstrated ferroelectric properties, but exhibited a high degree of leakage current density.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2016.03.018