The synthesis of metal organic frameworks derived 3D porous V2O5 microrods for NO2 detection and its UV-enhanced sensing performance

• Published in: Sensors and actuators. B, Chemical Chemical, 2023-10, Vol.393, p.134231, Article 134231
• Main Authors: Bu, Xiangrui, Ding, Kunfeng, Wu, Qiang, Yuan, Yubin, Liu, Weihua, Han, Chuanyu, Wang, Xiaoli, Li, Xin
• Format: Article
• Language: English
• Subjects: 3D porous V2O5; MOF-derivatives; NO2 sensing; UV illumination
• ISSN: 0925-4005; 1873-3077
• DOI: 10.1016/j.snb.2023.134231

As an n-type metal oxide semiconductor (MOS), vanadium pentoxide (V2O5) has shown great potential in gas sensing, especially for the detection of NO2. Herein, a highly sensitive NO2 sensor based on 3D porous V2O5 microrods (MRs) derived from metal organic frameworks (MOFs) was reported. The porous structure of vanadium-based MOF-derivatives (MIL-47) was tuned by the control of annealing temperature (300 °C–600 °C) in the pyrolysis process. The gas sensors with the MOF-derivatives are exposed to NO2 at 150 ℃ for gas sensing tests. The sensor with MOF-derivatives annealed at 500 °C (MIL-47–500) showed the highest response (527 %) to 50 ppm NO2. It also showed excellent selectivity, low limit of detection, and good repeatability. The NO2-sensing behaviors of the MIL-47–500 sensor under ultraviolet (UV) illumination have also been investigated. Under UV illumination, the response of the MIL-47–500 sensor increased to 706 %. At 75 °C, the response of the MIL-47–500 sensor toward 50 ppm NO2 was significantly improved from 57 % to 538 % under UV illumination. The response/recovery times were reduced from 102 s/300–48 s/178 s. The excellent performance was attributed to the unique porous structure of MIL-47–500 and the UV light excited charge carriers. [Display omitted] •3D porous V2O5 were prepared by annealing vanadium-based MOF (MIL-47).•The microstructures of V2O5 at different annealing temperature were studied.•The V2O5 annealed at 500 ºC showed the high response of 527 % to 50 ppm NO2.•Under UV, the properties of sensor are greatly improved at low temperature.