Efficiency optimization of All-Inorganic perovskite solar cell device using NiOx and ZnO as charge transport layers

• Published in: Solar energy 2024-10, Vol.281, p.112892, Article 112892
• Main Authors: Son, Hyojung, Heo, Young-Woo, Jeong, Byoung-Seong
• Format: Article
• Language: English
• Subjects: All-Inorganic; NiOx; Perovskite; Solar Cell; ZnO
• ISSN: 0038-092X
• DOI: 10.1016/j.solener.2024.112892

•Efficiency Optimization of an all-inorganic perovskite solar cell with the structure FTO/ZnO/CsPbBr3/NiOx/Au.•Employed solvent engineering techniques such as dropping solvents like IPA and EA during the spin-coating process.•Optimizing the thickness of the absorber layer and annealing conditions to enhance PCE.•After post-deposition annealing on CsPbBr3: PCE 0.91 % with an annealing temperature of 225 °C for 2hr. In this study, we have developed and refined an all-inorganic perovskite solar cell with the structure FTO/ZnO/CsPbBr3/NiOx/Au. This was accomplished by incorporating the inorganic perovskite CsPbBr3 and the inorganic charge transport layers ZnO and NiOx. We employed solvent engineering techniques such as dropping solvents like isopropyl alcohol (IPA) and ethyl acetate (EA) during the spin-coating process, along with optimizing the thickness of the absorber layer and annealing conditions to enhance the power conversion efficiency (PCE). Our evaluation of the impact of the CsPbBr3 absorption layer thickness on PCE revealed that efficiency improved with layer thicknesses up to 280 nm. Moreover, we investigated the influence of post-deposition annealing durations on CsPbBr3, experimenting with times of 0.5hr, 1hr, 2hr, 3hr, and 5hr. The optimal conversion efficiency of 0.91 % was attained with an annealing temperature of 225 °C for 2hr, particularly when the absorption layer thickness was set at 280 nm. These results suggest that the device structure optimization for all-inorganic perovskite quantum dot solar cells can be successfully applied for efficiency optimization.