Transparent conductive thin films of Cd2SnO4 obtained by the sol–gel technique and their use in a solar cell made with CdTe

In this work Cd2SnO4 polycrystalline thin films with cubic phase were deposited on glass substrates by the sol–gel technique starting from the mixture of two simple precursor solutions of CdO and SnO2, obtained at room temperature. Both solutions were prepared using metallic salts, cadmium acetate a...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2014-09, Vol.128, p.150-155
Main Authors: Diliegros Godines, C.J., Torres Castanedo, C.G., Castanedo Pérez, R., Torres Delgado, G., Zelaya Ángel, O.
Format: Article
Language:English
Subjects:
Applied sciences
Au/Cu2Te/CdTe/CdS/Cd2SnO4/glass solar cell
Cd2SnO4
Direct energy conversion and energy accumulation
Electrical engineering. Electrical power engineering
Electrical power engineering
Energy
Exact sciences and technology
Natural energy
Photoelectric conversion
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Sol–gel
TCO
Thin films
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Summary:In this work Cd2SnO4 polycrystalline thin films with cubic phase were deposited on glass substrates by the sol–gel technique starting from the mixture of two simple precursor solutions of CdO and SnO2, obtained at room temperature. Both solutions were prepared using metallic salts, cadmium acetate and stannous chloride. The Sn atomic concentration percentages (X) in the precursor solution with respect to Cd (1−X) were 16, 25, 29, 33, 36 and 40. The films were sintered at 550°C in air and, after that, exposed to two different annealing treatments, 96/4N2/H2 gas mixture and vacuum, at 350°C and 550°C, respectively. X-ray diffraction patterns of the films without annealing showed three types of films: i) for X33at%, Cd2SnO4+ CdSnO3 crystals were formed. Cd2SnO4 films maintained the spinel-type crystalline structure of the Cd2SnO4 after the annealing processes. On the other hand, Electron Dispersion Spectroscopy measurements revealed that Cd2SnO4 films obtained at X=29at%, without annealing, had a Cd/Sn ratio nearest to the one of the Cd2SnO4 compounds. With and without annealing Cd2SnO4 films showed high optical transmission ~85% in the 500nm
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2014.05.023