Direct solution deposition of device quality Sb2S3-xSex films for high efficiency solar cells

• Published in: Solar energy materials and solar cells 2018-08, Vol.183, p.52-58
• Main Authors: Wu, Chunyan, Zhang, Lijian, Ding, Honghe, Ju, Huanxin, Jin, Xin, Wang, Xiaomin, Zhu, Changfei, Chen, Tao
• Format: Article
• Language: English
• Subjects: Antimony Selenosulfide; Band gap; Photovoltaics; Solar cell; Solution process
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2018.04.009

Sb2S3-xSex (0 ≤x ≤ 3) is promising for practically applicable solar cell since it possesses excellent stability, suitable band gap, high extinction coefficient and abundant elemental storage. This study demonstrates a novel methodology towards simultaneous dissolution of Se and Sb2O3 for direct deposition of Sb2S3-xSex films. Mechanistic study shows that the formation of selenium-nitrogen free radical in sulfur-containing complex is responsible for the dissolution of selenium. The energy levels of the as-synthesized Sb2S3-xSex were examined by synchrotron radiation photoemission spectroscopy, revealing that more Se in the Sb2S3-xSex leads to the valence band shifting considerably upward while the conduction band remaining nearly unchanged. Moreover, for the first time we present that the solution processed Sb2S3-xSex can generate photovoltaic performance with an efficiency of 5.8%. This research provides a straightforward strategy for the fabrication of Sb2S3-xSex solar cells and offers an effective method for the synthesis of metal selenosulfide films. Simultaneous dissolution of selenium and Sb2O3 powder for direct synthesis of high efficiency photovoltaic Sb2S3-xSex films. [Display omitted] •A new dissolution mechanism of elemental selenium is discovered.•Direct deposition of photovoltaic Sb2S3-xSex thin film is achieved.•Solar cell based on Sb2S3-xSex thin film delivers power conversion efficiency that is comparable to the state-of-the-art values in planar heterojunction solar cells.