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Chain pyramid texturization for better light trapping and efficiency of silicon solar cells

To find a more effective light trapping structure for silicon solar cells, a chain pyramid structure was obtained by using texturing additives under alkaline condition. Compared with the conventional random pyramid's reflectivity of 9.78%, the reflectivity of the chain pyramid is reduced to 8.5...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2023-03, Vol.251, p.112137, Article 112137
Main Authors: Sun, Zongheng, Chen, Wei, Zhang, Xiaohu, Xu, Miao, Xing, Guoguang, Chen, Xingqian, Feng, Bowen, Li, Haozhen, Ma, Jiehua, Wang, Yan, Du, Xiaolong, Liu, Yaoping
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Language:English
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Summary:To find a more effective light trapping structure for silicon solar cells, a chain pyramid structure was obtained by using texturing additives under alkaline condition. Compared with the conventional random pyramid's reflectivity of 9.78%, the reflectivity of the chain pyramid is reduced to 8.54%, and the structure is more uniform. Optical simulation of chain pyramid shows that as the degree of overlap between the pyramids increases, the proportion of secondary reflection gradually decreases, transforming into higher order reflections. Compared with the PERC solar cells prepared with random pyramid, the Jsc of the cells prepared with the chain pyramid is increased by 0.25 mA/cm2, and the efficiency is increased by 0.15%. Subsequent EQE and reflectivity tests show that after the deposition of SiNx layer, the reflectivity advantage of the chain pyramid is mainly manifested in the short-wave range. •Chain pyramid structure has a lower reflectivity than traditional random pyramid structure.•Chain pyramid texturing is carried out under alkaline condition, which is suitable for large-scale routine production.•The reflection path distribution of chain pyramid is analyzed by ray tracing method.•The PERC solar cells fabricated with chain pyramid have higher Jsc and efficiency than cells fabricated with random pyramid.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2022.112137