Low-temperature metallization & interconnection for silicon heterojunction and perovskite silicon tandem solar cells

• Published in: Solar energy materials and solar cells 2023-10, Vol.261, p.112515, Article 112515
• Main Authors: De Rose, Angela, Erath, Denis, Nikitina, Veronika, Schube, Jörg, Güldali, Derya, Minat, Ädem, Rößler, Torsten, Richter, Alexei, Kirner, Simon, Kraft, Achim, Lorenz, Andreas
• Format: Article
• Language: English
• Subjects: Heterojunction; Interconnection; Low-temperature; Metallization; Perovskite; Tandem
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2023.112515

In this work, we present results on various low-temperature approaches for the metallization and interconnection of high-efficiency solar cells as silicon heterojunction (SHJ) or perovskite silicon tandems. By using fine line screen printing for the cell metallization and Ag-free or -reduced interconnection technologies, we demonstrate the potential of these approaches both for SHJ and perovskite silicon tandem cells. Furthermore, low-temperature (LT, ∼200 °C) or ultra-low-temperature (ULT, ∼150 °C) processes are utilized for metallization and interconnection to treat these temperature-sensitive solar cells with a reduced energy consumption. We compare LT soldering of SHJ cells with Pb-free alloys to state-of-the-art soldering processes and interconnection with electrically conductive adhesives (ECAs). For successful module integration of perovskite silicon tandem solar cells, these findings provide the basis to build full-size tandem modules with different interconnection technologies.