A novel method of determining bias lights for spectral response measurement of GaAs multi-junction laser power converters and its applications

• Published in: Solar energy materials and solar cells 2024-03, Vol.266, p.112661, Article 112661
• Main Authors: Shi, Linfeng, Sun, Chengyue, Liu, Yong, Liu, Ke, Zhang, Weinan, Wu, Yiyong, Guo, Hongliang, Sun, Qiang
• Format: Article
• Language: English
• Subjects: Bias lights determination; GaAs multi-junction laser power converters; Short-circuit current densities; Spectral response measurement; Wavelengths
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/j.solmat.2023.112661

Quantitative electrical analysis of sub-cells is crucial for the designing of high-efficiency GaAs multi-junction laser power converters (MJLPCs). However, finding suitable bias lights to separate the electrical performance of sub-cells is an enormous challenge, due to GaAs MJLPCs being assembled by GaAs p-n junctions. Therefore, this study proposes a novel and general method of determining bias lights for the SR measurement of GaAs MJLPCs based on the variation rules of simulated short-circuit current densities with wavelengths in the sub-cells of GaAs MJLPCs. By the method of determining bias lights, the external quantum efficiency (EQE) curves of a GaAs four-junction LPC have been successfully measured for the first time, which confirms the validity of the method. A novel and general method of determining bias lights for the SR measurement of GaAs multi-junction laser power converters (MJLPCs) was proposed, based on the variation of the short-circuit current densities with wavelengths in the sub-cells of GaAs MJLPCs. [Display omitted] •A novel method of determining bias lights for SR measurement of GaAs MJLPCs was proposed.•The method provides a theoretical reference for SR measurement of GaAs MJLPCs at high temperatures or after high-energy particle irradiation.•The EQE curves of a GaAs four-junction LPC were successfully measured by the method.