About bond model of S-type negative differential resistance in GaP LEDs

The bond models are presented that explain the S-type anomaly of GaP LEDs’ electrical characteristics at temperatures Т ≤ 120 K. A possible mechanism of negative differential resistance appearing in current-voltage characteristics is proposed, based on the features of the gallium phosphide complex b...

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Bibliographic Details
Published in:Superlattices and microstructures 2017-04, Vol.104, p.316-320
Main Authors: Gaydar, G., Konoreva, O., Maliy, Ye, Olikh, Ya, Petrenko, I., Pinkovska, M., Radkevych, O., Tartachnyk, V.
Format: Article
Language:English
Subjects:
Gallium phosphide
LED
Negative differential resistance
S-type
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Summary:The bond models are presented that explain the S-type anomaly of GaP LEDs’ electrical characteristics at temperatures Т ≤ 120 K. A possible mechanism of negative differential resistance appearing in current-voltage characteristics is proposed, based on the features of the gallium phosphide complex band structure. The conductive zone absolute minimum in this crystal is near the Brillouin zone end. Due to the positive internal bond, controlled by the current, intervalley electron transfer occurs from the side valley to the higher one with the smaller effective electron mass. While the applied voltage is increased, electrons move from the lateral valley to the direct conductive zone bottom and an S-type negative differential resistance region appears. •There are two negative differential resistance regions in CVC of GaP LEDs.•The NDR lower part might be due to internally electron transfer E1C to E3C.•The development of the NDR (T ≤ 120 K) is provided by the positive internal bond.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2017.02.042