Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorabl...

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Bibliographic Details
Published in:Superlattices and microstructures 2017-11, Vol.111, p.649-655
Main Authors: Thirunavukkarasu, Vasanthan, Lee, Jaehyun, Sadi, Toufik, Georgiev, Vihar P., Lema, Fikru-Adamu, Soundarapandian, Karuppasamy Pandian, Jhan, Yi-Ruei, Yang, Shang-Yi, Lin, Yu-Ru, Kurniawan, Erry Dwi, Wu, Yung-Chun, Asenov, Asen
Format: Article
Language:English
Subjects:
3D TCAD simulation
FinFETs
Germanium
Junctionless
Quantum confinement effects
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Summary:The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2017.07.020