IGZO TFT-based circuit with tunable threshold voltage by laser annealing

In this work, a high-performance inverter based on amorphous indium–gallium–zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer...

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Bibliographic Details
Published in:Superlattices and microstructures 2017-11, Vol.111, p.1172-1176
Main Authors: Huang, Xiaoming, Yu, Guang, Wu, Chenfei
Format: Article
Language:English
Subjects:
a-IGZO TFT
Inverter
Laser annealing
Ring oscillator
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Summary:In this work, a high-performance inverter based on amorphous indium–gallium–zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved. •The Vth of the load TFT can be tuned by laser annealing.•The laser annealed inverter shows much improved switching characteristics.•The dynamic performance of ring oscillator based on laser-annealed inverter is improved.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2017.08.027