Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which,...

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Bibliographic Details
Published in:Superlattices and microstructures 2018-08, Vol.120, p.60-66
Main Authors: Woo, Sola, Kim, Minsuk, Oh, Hyungon, Cho, Kyoungah, Kim, Sangsig
Format: Article
Language:English
Subjects:
a-IGZO TFT
Bending strain
Flexible display
TCAD simulation
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Summary:In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs. •Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs.•The bending-strain-induced localized DOS and the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation.•The device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2018.05.009