A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept

In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed and investigated. The presented structure uses two isolated gates with the same work function (main gate (MG) and P-gate (PG)) which are separated by a 3 nm SiO2 spacer. PG has a constant voltage and a cons...

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Bibliographic Details
Published in:Superlattices and microstructures 2019-01, Vol.125, p.168-176
Main Authors: Tahaei, Seyyedeh Hoda, Ghoreishi, Seyed Saleh, Yousefi, Reza, Aderang, Habib
Format: Article
Language:English
Subjects:
Ambipolar
Carbon nanotube (CNT)
Junctionless transistor
Subthreshold swing (SS)
Tunnel FET (TFET)
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Summary:In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed and investigated. The presented structure uses two isolated gates with the same work function (main gate (MG) and P-gate (PG)) which are separated by a 3 nm SiO2 spacer. PG has a constant voltage and a constant length of 0.4 V and 12 nm, respectively which has been used for electrically activation of the source region to behave like a tunnel FET. Simulations show that in comparison with the conventional carbon nanotube tunnel field-effect transistor (CNT-TFET) and carbon nanotube tunnel field-effect transistor with hetero-gate dielectric (HGD-CNT-TFET) suggested structure has significant higher ON current and improvement in ambipolar behavior. Furthermore, analog characteristics like unity gain frequency (ft) and transconductance (gm) have been improved considerably.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2018.11.004