Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE

AlN/c-Al2O3 templates were grown by plasma-assisted molecular beam epitaxy using migration enhanced epitaxy (MEE) and metal modulated epitaxy (MME) employed for consequent growing the nucleation and buffer layers (NL and BL). Structural quality and stress evolving were compared using in situ stress...

Full description

Saved in:
Bibliographic Details
Published in:Superlattices and microstructures 2020-02, Vol.138, p.106368, Article 106368
Main Authors: Nechaev, D.V., Koshelev, O.A., Ratnikov, V.V., Brunkov, P.N., Myasoedov, A.V., Sitnikova, A.A., Ivanov, S.V., Jmerik, V.N.
Format: Article
Language:English
Subjects:
AlN/c-Al2O3 interface
III-Nitride semiconductors
Migration enhanced epitaxy
Plasma-assisted molecular beam epitaxy
Stress evolution
Surface morphology
Threading dislocations
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:AlN/c-Al2O3 templates were grown by plasma-assisted molecular beam epitaxy using migration enhanced epitaxy (MEE) and metal modulated epitaxy (MME) employed for consequent growing the nucleation and buffer layers (NL and BL). Structural quality and stress evolving were compared using in situ stress measurements, x-ray diffraction, transmission and atomic force microscopies. Optimization of MEE mode of NL led to a high degree of initial nuclei coalescence and the weak tensile stress (
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2019.106368