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Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion

Tunnel oxide passivated contact (TOPCon) industrial (244.32 cm2) c-Si solar cell is fabricated in this paper. Both the ultra-thin silicon oxide layer and intrinsic polycrystalline silicon layer are deposited by low-pressure chemical vapor deposited (LPCVD). Then intrinsic polycrystalline silicon lay...

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Published in:Superlattices and microstructures 2020-12, Vol.148, p.106720, Article 106720
Main Authors: Zhou, Ying, Tao, Ke, Liu, Aimin, Jia, Rui, Bao, Jianhui, Jiang, Shuai, Sun, Yufeng, Yang, Sanchuan, Wang, Qinqin, Zhang, Qiang, Yang, Songbo, Cao, Yujia, Qu, Hui
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cited_by cdi_FETCH-LOGICAL-c300t-f41b838bcf75bd87ed135005e515e7d1aa247a4a85d02de3a36de51538d69af93
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container_start_page 106720
container_title Superlattices and microstructures
container_volume 148
creator Zhou, Ying
Tao, Ke
Liu, Aimin
Jia, Rui
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Jiang, Shuai
Sun, Yufeng
Yang, Sanchuan
Wang, Qinqin
Zhang, Qiang
Yang, Songbo
Cao, Yujia
Qu, Hui
description Tunnel oxide passivated contact (TOPCon) industrial (244.32 cm2) c-Si solar cell is fabricated in this paper. Both the ultra-thin silicon oxide layer and intrinsic polycrystalline silicon layer are deposited by low-pressure chemical vapor deposited (LPCVD). Then intrinsic polycrystalline silicon layers are doped by thermal diffusion of POCl3 in an industrial-scale quartz tube furnace. Experiment conditions like polycrystalline silicon thickness, diffusion temperature, diffusion time and POCL3 flow rate on the passivation quality of TOPCon structure are investigated in detail and low recombination current density ~8 fA/m2 has been achieved for c-Si/SiOx/poly-Si(70 nm)/SiNx structure at diffusion temperature 850 °C. A variation about 30–40 mV has been observed between the iVoc and Voc for 70 nm samples, which should be attributed to the metallization-induced degration. Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70 nm thick poly-Si and 170 nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. Finally, by optimizing the polysilion thickness and phosphorus diffusion, the champion solar cell efficiency of 22.81% is achieved, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2, FF of 81.62%. •Low-Pressure Chemical Vapor Deposition of polysilicon is adopted for TOPCon solar cells.•polycrystalline silicon layer is doped by POCl3 diffusion method.•TOPCon solar cell properties based on POCl3 diffusion condition and polysilicon thickness are detailed investigated.•A champion efficiency over 22.8% is obtained by TOPCon cells.
doi_str_mv 10.1016/j.spmi.2020.106720
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Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70 nm thick poly-Si and 170 nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. 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Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70 nm thick poly-Si and 170 nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. 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Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70 nm thick poly-Si and 170 nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. Finally, by optimizing the polysilion thickness and phosphorus diffusion, the champion solar cell efficiency of 22.81% is achieved, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2, FF of 81.62%. •Low-Pressure Chemical Vapor Deposition of polysilicon is adopted for TOPCon solar cells.•polycrystalline silicon layer is doped by POCl3 diffusion method.•TOPCon solar cell properties based on POCl3 diffusion condition and polysilicon thickness are detailed investigated.•A champion efficiency over 22.8% is obtained by TOPCon cells.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.spmi.2020.106720</doi></addata></record>
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subjects Intrinsic polycrystalline silicon thin film
LPCVD
Phosphorus diffusion
Tunel oxide passivated contact
title Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion
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