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Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion
Tunnel oxide passivated contact (TOPCon) industrial (244.32 cm2) c-Si solar cell is fabricated in this paper. Both the ultra-thin silicon oxide layer and intrinsic polycrystalline silicon layer are deposited by low-pressure chemical vapor deposited (LPCVD). Then intrinsic polycrystalline silicon lay...
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Published in: | Superlattices and microstructures 2020-12, Vol.148, p.106720, Article 106720 |
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creator | Zhou, Ying Tao, Ke Liu, Aimin Jia, Rui Bao, Jianhui Jiang, Shuai Sun, Yufeng Yang, Sanchuan Wang, Qinqin Zhang, Qiang Yang, Songbo Cao, Yujia Qu, Hui |
description | Tunnel oxide passivated contact (TOPCon) industrial (244.32 cm2) c-Si solar cell is fabricated in this paper. Both the ultra-thin silicon oxide layer and intrinsic polycrystalline silicon layer are deposited by low-pressure chemical vapor deposited (LPCVD). Then intrinsic polycrystalline silicon layers are doped by thermal diffusion of POCl3 in an industrial-scale quartz tube furnace. Experiment conditions like polycrystalline silicon thickness, diffusion temperature, diffusion time and POCL3 flow rate on the passivation quality of TOPCon structure are investigated in detail and low recombination current density ~8 fA/m2 has been achieved for c-Si/SiOx/poly-Si(70 nm)/SiNx structure at diffusion temperature 850 °C. A variation about 30–40 mV has been observed between the iVoc and Voc for 70 nm samples, which should be attributed to the metallization-induced degration. Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70 nm thick poly-Si and 170 nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. Finally, by optimizing the polysilion thickness and phosphorus diffusion, the champion solar cell efficiency of 22.81% is achieved, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2, FF of 81.62%.
•Low-Pressure Chemical Vapor Deposition of polysilicon is adopted for TOPCon solar cells.•polycrystalline silicon layer is doped by POCl3 diffusion method.•TOPCon solar cell properties based on POCl3 diffusion condition and polysilicon thickness are detailed investigated.•A champion efficiency over 22.8% is obtained by TOPCon cells. |
doi_str_mv | 10.1016/j.spmi.2020.106720 |
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•Low-Pressure Chemical Vapor Deposition of polysilicon is adopted for TOPCon solar cells.•polycrystalline silicon layer is doped by POCl3 diffusion method.•TOPCon solar cell properties based on POCl3 diffusion condition and polysilicon thickness are detailed investigated.•A champion efficiency over 22.8% is obtained by TOPCon cells.</description><identifier>ISSN: 0749-6036</identifier><identifier>EISSN: 1096-3677</identifier><identifier>DOI: 10.1016/j.spmi.2020.106720</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Intrinsic polycrystalline silicon thin film ; LPCVD ; Phosphorus diffusion ; Tunel oxide passivated contact</subject><ispartof>Superlattices and microstructures, 2020-12, Vol.148, p.106720, Article 106720</ispartof><rights>2020 Elsevier Ltd</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c300t-f41b838bcf75bd87ed135005e515e7d1aa247a4a85d02de3a36de51538d69af93</citedby><cites>FETCH-LOGICAL-c300t-f41b838bcf75bd87ed135005e515e7d1aa247a4a85d02de3a36de51538d69af93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhou, Ying</creatorcontrib><creatorcontrib>Tao, Ke</creatorcontrib><creatorcontrib>Liu, Aimin</creatorcontrib><creatorcontrib>Jia, Rui</creatorcontrib><creatorcontrib>Bao, Jianhui</creatorcontrib><creatorcontrib>Jiang, Shuai</creatorcontrib><creatorcontrib>Sun, Yufeng</creatorcontrib><creatorcontrib>Yang, Sanchuan</creatorcontrib><creatorcontrib>Wang, Qinqin</creatorcontrib><creatorcontrib>Zhang, Qiang</creatorcontrib><creatorcontrib>Yang, Songbo</creatorcontrib><creatorcontrib>Cao, Yujia</creatorcontrib><creatorcontrib>Qu, Hui</creatorcontrib><title>Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion</title><title>Superlattices and microstructures</title><description>Tunnel oxide passivated contact (TOPCon) industrial (244.32 cm2) c-Si solar cell is fabricated in this paper. Both the ultra-thin silicon oxide layer and intrinsic polycrystalline silicon layer are deposited by low-pressure chemical vapor deposited (LPCVD). Then intrinsic polycrystalline silicon layers are doped by thermal diffusion of POCl3 in an industrial-scale quartz tube furnace. Experiment conditions like polycrystalline silicon thickness, diffusion temperature, diffusion time and POCL3 flow rate on the passivation quality of TOPCon structure are investigated in detail and low recombination current density ~8 fA/m2 has been achieved for c-Si/SiOx/poly-Si(70 nm)/SiNx structure at diffusion temperature 850 °C. A variation about 30–40 mV has been observed between the iVoc and Voc for 70 nm samples, which should be attributed to the metallization-induced degration. Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70 nm thick poly-Si and 170 nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. Finally, by optimizing the polysilion thickness and phosphorus diffusion, the champion solar cell efficiency of 22.81% is achieved, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2, FF of 81.62%.
•Low-Pressure Chemical Vapor Deposition of polysilicon is adopted for TOPCon solar cells.•polycrystalline silicon layer is doped by POCl3 diffusion method.•TOPCon solar cell properties based on POCl3 diffusion condition and polysilicon thickness are detailed investigated.•A champion efficiency over 22.8% is obtained by TOPCon cells.</description><subject>Intrinsic polycrystalline silicon thin film</subject><subject>LPCVD</subject><subject>Phosphorus diffusion</subject><subject>Tunel oxide passivated contact</subject><issn>0749-6036</issn><issn>1096-3677</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KxDAQgIMouK6-gKe8QNdJ0yYteJHFP1jwoJ5DmkzZLN20JKnat7dlPXsYhpnhG2Y-Qm4ZbBgwcXfYxOHoNjnkS0PIHM7IikEtMi6kPCcrkEWdCeDiklzFeACAumByRY7vJiD6bAjOJ7TUZ2kakDpvx5jCRGPf6UANdl2k3y7taRq9x472P84iHXSM7ksvoOl90iZR2w9z1Ux02PdxjjBGal3bjtH1_ppctLqLePOX1-Tz6fFj-5Lt3p5ftw-7zHCAlLUFaypeNaaVZWMriZbxEqDEkpUoLdM6L6QudFVayC1yzYVdZryyotZtzdckP-01oY8xYKvm_446TIqBWoSpg1qEqUWYOgmbofsThPNlXw6DisahN2hdQJOU7d1_-C9GlXdf</recordid><startdate>202012</startdate><enddate>202012</enddate><creator>Zhou, Ying</creator><creator>Tao, Ke</creator><creator>Liu, Aimin</creator><creator>Jia, Rui</creator><creator>Bao, Jianhui</creator><creator>Jiang, Shuai</creator><creator>Sun, Yufeng</creator><creator>Yang, Sanchuan</creator><creator>Wang, Qinqin</creator><creator>Zhang, Qiang</creator><creator>Yang, Songbo</creator><creator>Cao, Yujia</creator><creator>Qu, Hui</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>202012</creationdate><title>Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion</title><author>Zhou, Ying ; Tao, Ke ; Liu, Aimin ; Jia, Rui ; Bao, Jianhui ; Jiang, Shuai ; Sun, Yufeng ; Yang, Sanchuan ; Wang, Qinqin ; Zhang, Qiang ; Yang, Songbo ; Cao, Yujia ; Qu, Hui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c300t-f41b838bcf75bd87ed135005e515e7d1aa247a4a85d02de3a36de51538d69af93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Intrinsic polycrystalline silicon thin film</topic><topic>LPCVD</topic><topic>Phosphorus diffusion</topic><topic>Tunel oxide passivated contact</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Ying</creatorcontrib><creatorcontrib>Tao, Ke</creatorcontrib><creatorcontrib>Liu, Aimin</creatorcontrib><creatorcontrib>Jia, Rui</creatorcontrib><creatorcontrib>Bao, Jianhui</creatorcontrib><creatorcontrib>Jiang, Shuai</creatorcontrib><creatorcontrib>Sun, Yufeng</creatorcontrib><creatorcontrib>Yang, Sanchuan</creatorcontrib><creatorcontrib>Wang, Qinqin</creatorcontrib><creatorcontrib>Zhang, Qiang</creatorcontrib><creatorcontrib>Yang, Songbo</creatorcontrib><creatorcontrib>Cao, Yujia</creatorcontrib><creatorcontrib>Qu, Hui</creatorcontrib><collection>CrossRef</collection><jtitle>Superlattices and microstructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Ying</au><au>Tao, Ke</au><au>Liu, Aimin</au><au>Jia, Rui</au><au>Bao, Jianhui</au><au>Jiang, Shuai</au><au>Sun, Yufeng</au><au>Yang, Sanchuan</au><au>Wang, Qinqin</au><au>Zhang, Qiang</au><au>Yang, Songbo</au><au>Cao, Yujia</au><au>Qu, Hui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion</atitle><jtitle>Superlattices and microstructures</jtitle><date>2020-12</date><risdate>2020</risdate><volume>148</volume><spage>106720</spage><pages>106720-</pages><artnum>106720</artnum><issn>0749-6036</issn><eissn>1096-3677</eissn><abstract>Tunnel oxide passivated contact (TOPCon) industrial (244.32 cm2) c-Si solar cell is fabricated in this paper. Both the ultra-thin silicon oxide layer and intrinsic polycrystalline silicon layer are deposited by low-pressure chemical vapor deposited (LPCVD). Then intrinsic polycrystalline silicon layers are doped by thermal diffusion of POCl3 in an industrial-scale quartz tube furnace. Experiment conditions like polycrystalline silicon thickness, diffusion temperature, diffusion time and POCL3 flow rate on the passivation quality of TOPCon structure are investigated in detail and low recombination current density ~8 fA/m2 has been achieved for c-Si/SiOx/poly-Si(70 nm)/SiNx structure at diffusion temperature 850 °C. A variation about 30–40 mV has been observed between the iVoc and Voc for 70 nm samples, which should be attributed to the metallization-induced degration. Not consistent with the result obtained from symmetric samples, both an improvement to the solar cell efficiency has been found for 70 nm thick poly-Si and 170 nm thick poly-Si at the diffusion temperature above the optimal diffusion temperature. Finally, by optimizing the polysilion thickness and phosphorus diffusion, the champion solar cell efficiency of 22.81% is achieved, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2, FF of 81.62%.
•Low-Pressure Chemical Vapor Deposition of polysilicon is adopted for TOPCon solar cells.•polycrystalline silicon layer is doped by POCl3 diffusion method.•TOPCon solar cell properties based on POCl3 diffusion condition and polysilicon thickness are detailed investigated.•A champion efficiency over 22.8% is obtained by TOPCon cells.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.spmi.2020.106720</doi></addata></record> |
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subjects | Intrinsic polycrystalline silicon thin film LPCVD Phosphorus diffusion Tunel oxide passivated contact |
title | Screen-printed n-type industry solar cells with tunnel oxide passivated contact doped by phosphorus diffusion |
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