Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

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Bibliographic Details
Published in:Solid state communications 2004-01, Vol.129 (1), p.63-68
Main Authors: Tyschenko, I.E., Talochkin, A.B., Cherkov, A.G., Zhuravlev, K.S., Yankov, R.A.
Format: Article
Language:English
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ISSN:0038-1098
DOI:10.1016/j.ssc.2003.09.015